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STD5NE10のメーカーはST Microelectronicsです、この部品の機能は「N - CHANNEL POWER MOSFET」です。 |
部品番号 | STD5NE10 |
| |
部品説明 | N - CHANNEL POWER MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD5NE10ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
www.DataSheet4U.com
® STD5NE10
N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD5NE10
100 V
< 0.4 Ω
5A
s TYPICAL RDS(on) = 0.32 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE TESTED
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VG S
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1999
Va l u e
100
100
± 20
5
3.5
20
25
0.17
0.6
-65 to 175
175
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/9
1 Page STD5NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 3.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V ID = 5 A VGS = 10 V
Min.
Typ.
6.5
15
14
6
4
Max.
18
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 3.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V
ID = 7 A
RG = 4.7 Ω
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
25
7
7
8
16
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 8 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 5 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
5
20
Unit
A
A
1.5
75
210
5.5
V
ns
nC
A
Safe Operating Area for
Thermal Impedance
3/9
3Pages | |||
ページ | 合計 : 3 ページ | ||
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部品番号 | 部品説明 | メーカ |
STD5NE10 | N - CHANNEL POWER MOSFET | ST Microelectronics |
STD5NE10L | N - CHANNEL STripFET POWER MOSFET | ST Microelectronics |