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2SC5752 の電気的特性と機能

2SC5752のメーカーはNECです、この部品の機能は「NPN SILICON RF TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SC5752
部品説明 NPN SILICON RF TRANSISTOR
メーカ NEC
ロゴ NEC ロゴ 




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2SC5752 Datasheet, 2SC5752 PDF,ピン配置, 機能
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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5752
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
4-PIN SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package
ORDERING INFORMATION
Part Number
2SC5752
2SC5752-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
6.0
2.0
100
200
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15658EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001

1 Page





2SC5752 pdf, ピン配列
2SC5752
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
250
200
150
100
50
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
0 123 45 6
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.5
0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
90
700 µA
80
600 µA
70
500 µA
60
400 µA
50
40 300 µA
30 200 µA
20
10 IB = 100 µA
0 2468
Collector to Emitter Voltage VCE (V)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1 10
Collector Current IC (mA)
100
Data Sheet P15658EJ1V0DS
3


3Pages


2SC5752 電子部品, 半導体
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 3 V
f = 2 GHz
16
6 Ga 12
48
24
NF
00
1 10 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
2SC5752
6 Data Sheet P15658EJ1V0DS

6 Page



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共有リンク

Link :


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2SC5751

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NEC
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