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IRF8010SPBF の電気的特性と機能

IRF8010SPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF8010SPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF8010SPBF Datasheet, IRF8010SPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95433
IRF8010SPbF
SMPS MOSFET IRF8010LPbF
Applications
l High frequency DC-DC converters
HEXFET® Power MOSFET
l UPS and Motor Control
l Lead-Free
VDSS RDS(on) max
ID
100V
15m
80A‡
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical RDS(on) = 12m
D2Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
gRθJC
Junction-to-Case
Junction-to-Case (end of life)
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient (PCB Mount, steady state)
Max.
80i
57
320
260
1.8
± 20
16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
0.50
–––
Max.
0.57
0.80
–––
40
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
Notes  through ˆ are on page 8
www.irf.com
1
06/21/04

1 Page





IRF8010SPBF pdf, ピン配列
IRF8010S/LPbF
10000
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
10
1
0.1
0.1
4.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
10
4.0V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
1
2.0
VDS = 50V
20µs PULSE WIDTH
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
ID = 80A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
V GS = 10V
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF8010SPBF 電子部品, 半導体
IRF8010S/LPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
600
ID
TOP 18A
500 32A
BOTTOM
45A
400
300
200
100
0
25 50 75 100 125 150 175
Starting Tj, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF8010SPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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