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PDF IRF7904UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7904UPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96084A
IRF7904UPbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET® Power MOSFET
VDSS
RDS(on) max
:30V Q1 16.2m @VGS = 10V
:Q2 10.8m @VGS = 10V
ID
7.6A
11A
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for RG
l Lead-Free
G1 1
S2 2
S2 3
G2 4
8 D1
7 S 1 / D2
6 S 1 / D2
5 S 1 / D2
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
7.6 11
6.1 8.9
61 89
1.4 2.0
0.9 1.3
0.011
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
20
90
Q2 Max.
20
62.5
Units
°C/W
www.irf.com
1
09/19/06
1 page  
Q1 - Control FET
1.5
ID = 7.6A
VGS = 10V
Typical Characteristics
IRF7904UPbF
Q2 - Synchronous FET
1.5
ID = 11A
VGS = 10V
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100.0
10.0 TJ = 150°C
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
ID = 7.6A
35
30
25
20 TJ = 125°C
15
10
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 17. Typical On-Resistance vs.Gate Voltage
www.irf.com
1.0 TJ = 25°C
VGS = 0V
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
25
ID = 11A
20
15 TJ = 125°C
10
TJ = 25°C
5
2.0
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 18. Typical On-Resistance vs.Gate Voltage
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7904UPBF.PDF ] | |
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