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IRFN440 の電気的特性と機能

IRFN440のメーカーはInternational Rectifierです、この部品の機能は「POWER MOSFET N-CHANNEL」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFN440
部品説明 POWER MOSFET N-CHANNEL
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFN440 Datasheet, IRFN440 PDF,ピン配置, 機能
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Provisional Data Sheet No. PD-9.1552
HEXFET® POWER MOSFET
IRFN440
N-CHANNEL
500 Volt, 0.85HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-stateresistancecom-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Product Summary
Part Number
BVDSS
IRFN440
500V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
RDS(on)
0.85
ID
8.0A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN440
8.0
5.0
32
125
1.0
±20
700
8.0
12.5
3.5
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g
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IRFN440 pdf, ピン配列
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Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
ID = 8A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
ID = 8A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFN440 電子部品, 半導体
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Fig. 13b — Basic Gate Charge Waveform
ΠRepetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
 @ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = 8.0A, VGS = 10V, 25 RG 200
Ž ISD 8.0A, di/dt 100A/µs,
VDD BVDSS, TJ 150°C
 Pulse width 300 µs; Duty Cycle 2%
 K/W = °C/W
W/K = W/°C
Case Outline and Dimensions — SMD-1
All dimensions in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
9/96
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部品番号部品説明メーカ
IRFN440

POWER MOSFET N-CHANNEL

International Rectifier
International Rectifier
IRFN440

POWER MOSFET N-CHANNEL

International Rectifier
International Rectifier


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