IRG4CC71KB Datasheet PDF - International Rectifier
| Part Number | IRG4CC71KB | |
| Description | IGBT Die | |
| Manufacturers | International Rectifier | |
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IRG4CC71KB IGBT Die in Wafer Form
PD- 91834A
IRG4CC71KB
C
G
E
600 V
Size 7.1
Ultra-Fast Speed
Circuit Rated Rated
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
VCE (on)
V(BR)CES
VGE(th)
ICES
IGES
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
1.7V Max.
600V Min.
3.0V Min., 6.5V Max.
300 µA Max.
± 1.1 µA Max.
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 250µA, VGE = 0V
VGE = VCE , TJ =25°C, IC =250µA
TJ = 25°C, VCE = 600V
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Cr-NiV-Ag ( 1kA-2kA-.2.5kA )
Nominal Front Metal Composition, Thickness:
99% Al, 1% Si (4 microns)
Dimensions:
0.305" x 0.390"
Wafer Diameter:
150mm, with std. < 100 > flat
Wafer thickness:
.015" + / -.003"
Relevant Die Mechanical Dwg. Number01-5271
Minimum Street Width
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
Ink Dot Location
Consistent throughout same wafer lot
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300C
Reference Standard IR packaged part ( for design ) : IRG4PSC71K
Die Outline
www.irf.com
11/28/05
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRG4CC71KB electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRG4CC71KB.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRG4CC71KB | The function is IGBT Die. International Rectifier | |
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