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IRFB4332PBF の電気的特性と機能

IRFB4332PBFのメーカーはInternational Rectifierです、この部品の機能は「PDP SWITCH」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4332PBF
部品説明 PDP SWITCH
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB4332PBF Datasheet, IRFB4332PBF PDF,ピン配置, 機能
www.DataSheet4U.com
PDP SWITCH
PD - 97099
IRFB4332PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
250
300
29
120
175
DD
V
V
m:
A
°C
G
S
S
GD
TO-220AB
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Max.
±30
60
42
230
120
390
200
2.6
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.38
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through … are on page 8
www.irf.com
1
6/5/06

1 Page





IRFB4332PBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
10 5.5V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10
1 TJ = 25°C
0.1
0.01
4.0
VDS = 25V
60µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
1000
800
L = 220nH
C = 0.3µF
100°C
25°C
600
400
200
0
150 160 170 180 190 200
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
www.irf.com
IRFB4332PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 35A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
1000
800
L = 220nH
C = Variable
100°C
25°C
600
400
200
0
100 110 120 130 140 150 160 170
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3


3Pages


IRFB4332PBF 電子部品, 半導体
IRFB4332PbF
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

RG
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
-„ +
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
*
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
Re-Applied
** + Voltage
Body Diode Forward Drop
ISD controlled by Duty Factor "D"
-
Inductor Curent
D.U.T. - Device Under Test
Ripple 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 20a. Gate Charge Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFB4332PBF

PDP SWITCH

International Rectifier
International Rectifier


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