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PDF IRFB4332PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFB4332PBF | |
| Descripción | PDP SWITCH | |
| Fabricantes | International Rectifier | |
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PDP SWITCH
PD - 97099
IRFB4332PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
250
300
29
120
175
DD
V
V
m:
A
°C
G
S
S
GD
TO-220AB
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Max.
±30
60
42
230
120
390
200
2.6
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.38
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through
are on page 8
www.irf.com
1
6/5/06
1 page  
0.40
ID = 35A
0.30
0.20
0.10
0.00
5
TJ = 125°C
TJ = 25°C
6789
VGS, Gate-to-Source Voltage (V)
10
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFB4332PbF
1000
800
ID
TOP 8.3A
13A
BOTTOM 35A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
180
ton= 1µs
160 Duty cycle = 0.25
Half Sine Wave
140 Square Pulse
120
100
80
60
40
20
0
25
50 75 100 125 150
Case Temperature (°C)
175
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01 0.02
0.01
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.077468 0.000097
τ3τ3 0.169886 0.001689
0.13319 0.012629
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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