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IRFB4229PBFのメーカーはInternational Rectifierです、この部品の機能は「PDP SWITCH」です。 |
部品番号 | IRFB4229PBF |
| |
部品説明 | PDP SWITCH | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4229PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD - 97078
PDP SWITCH
IRFB4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
250
VDS (Avalanche) typ.
300
RDS(ON) typ. @ 10V
38
IRP max @ TC= 100°C
91
TJ max
175
DD
V
V
m:
A
°C
G
G
Gate
S
D
Drain
S
D
G
TO-220AB
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
PD @TC = 25°C
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
fCase-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
±30
46
33
180
91
330
190
2.2
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through
are on page 8
www.irf.com
1
04/12/06
1 Page 1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
10
1
0.1
5.5V ≤ 60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
1 TJ = 25°C
0.1
0.01
4.0
VDS = 25V
≤ 60µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
1600
1200
L = 220nH
C = 0.3µF
100°C
25°C
800
400
0
150 160 170 180 190 200
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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IRFB4229PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
10
1
0.1
≤ 60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 26A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
1400
1200
1000
L = 220nH
C = Variable
100°C
25°C
800
600
400
200
0
100 110 120 130 140 150 160 170
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3
3Pages IRFB4229PbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
-
RG
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
Reverse
- +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
*
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
Re-Applied
** + Voltage
Body Diode Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Inductor Curent
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 19a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Vds
Vgs(th)
Id
Vgs
Fig 20a. Gate Charge Test Circuit
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB4229PBF | PDP SWITCH | International Rectifier |