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IRFW550A の電気的特性と機能

IRFW550AのメーカーはFairchild Semiconductorです、この部品の機能は「(IRFI550A / IRFW550A) Advanced Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFW550A
部品説明 (IRFI550A / IRFW550A) Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRFW550A Datasheet, IRFW550A PDF,ピン配置, 機能
www.DataSheet4U.com
Advanced Power MOSFET
IRFW/I550A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.032 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.04
ID = 40 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
40
28.3
160
+_ 20
640
40
16.7
6.5
3.8
167
1.11
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
0.9
40
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation

1 Page





IRFW550A pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
102 Top :
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.06
0.05 VGS = 10 V
0.04
0.03
0.02 VGS = 20 V
0.01
@ Note : TJ = 25 oC
0.00
0 25 50 75 100 125 150 175
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
3000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
2000
C oss
1000
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFW/I550A
Fig 2. Transfer Characteristics
102
175 oC
101
25 oC
100
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =40.0 A
0
0 10 20 30 40 50 60 70 80
QG , Total Gate Charge [nC]


3Pages


IRFW550A 電子部品, 半導体
IRFW/I550A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s--e--W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD

6 Page



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共有リンク

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部品番号部品説明メーカ
IRFW550A

(IRFI550A / IRFW550A) Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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