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IRHF54034 の電気的特性と機能

IRHF54034のメーカーはInternational Rectifierです、この部品の機能は「(IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHF54034
部品説明 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHF54034 Datasheet, IRHF54034 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 93791D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on)
IRHF57034 100K Rads (Si) 0.048
IRHF53034 300K Rads (Si) 0.048
IRHF54034 500K Rads (Si) 0.048
IRHF58034 1000K Rads (Si) 0.060
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
REF: MIL-PRF-19500/701
5 TECHNOLOGY
™
ID QPL Part Number
12A* JANSR2N7492T2
12A* JANSF2N7492T2
12A* JANSG2N7492T2
12A* JANSH2N7492T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
12*
9.5 A
48
25 W
0.2 W/°C
±20 V
270 mJ
12 A
2.5 mJ
9.6 V/ns
-55 to 150
oC
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/27/06

1 Page





IRHF54034 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHF57034, JANSR2N7492T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60
VGS(th) Gate Threshold Voltage
2.0 4.0
60 —
1.5 4.0
V
V GS = 0V, ID = 1.0mA
V GS = VDS, ID = 1.0mA
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
VGS = 20V
VGS = -20 V
IDSS Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source Ã
— 10 — 25 µA
— 0.034 — 0.043
VDS= 48V, VGS =0V
VGS = 12V, ID = 9.5A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source Ã
— 0.048 — 0.060
VGS = 12V, ID = 9.5A
On-State Resistance (TO-39)
VSD Diode Forward Voltage Ã
— 1.5 — 1.5 V
VGS = 0V, IS = 12A
1. Part numbers IRHF57034 (JANSR2N7492T2), IRHF53034 (JANSF2N7492T2) and IRHF54034 (JANSG2N7492T2)
2. Part number IRHF58034 (JANSH2N7492T2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br 37.3
285 36.8 60
60
60
60
40
Xe 63
300 29 46
46
35
25
15
Au 86.6
2068
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
Br
I
Au
-5 -10 -15
VGS
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHF54034 電子部品, 半導体
IRHF57034, JANSR2N7492T2
Pre-Irradiation
16
LIMITED BY PACKAGE
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1 0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHF54034

(IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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