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PDF IRF6622 Data sheet ( Hoja de datos )
| Número de pieza | IRF6622 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97199
IRF6622
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Socket
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
SQ
MP
DirectFET ISOMETRIC
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
20
ID = 15A
15
10
TJ = 125°C
5
TJ = 25°C
0
3456789
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±20
15
12
59
120
13
12
Units
V
A
mJ
A
6.0
5.0 VDS= 20V
VDS= 13V
4.0 VDS= 5.0V
3.0
ID= 12A
2.0
1.0
0.0
0
2 4 6 8 10 12
QG Total Gate Charge (nC)
14
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
1
04/04/06
1 page  
1000
100
10 TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
IRF6622
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1
0.1
0.01
TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.10
1.00
1msec
10msec
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
50 2.5
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
60
50
40
2.0
1.5 ID = 25µA
ID = 50µA
1.0 ID = 100µA
ID = 250µA
0.5
ID = 1mA
ID = 1.0A
0.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
3.7A
5.3A
BOTTOM 12A
30
20
10
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6622.PDF ] | |
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