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PDF IXFK32N50Q Data sheet ( Hoja de datos )
| Número de pieza | IXFK32N50Q | |
| Descripción | (IXFx3xN50Q) HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFK/IXFX 30N50Q
IXFK/IXFX 32N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,High dv/dt
VI
DSS D25
500 V 30 A
500 V 32 A
R
DS(on)
0.16 Ω
0.15 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
V
GS
V
GSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
500
500
±20
±30
TC = 25°C
TC = 25°C,
pulse width limited by TJM
TC = 25°C
T
C
= 25°C
30N50Q
32N50Q
30N50Q
32N50Q
30
32
120
128
32
45
1500
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
T
C
= 25°C
5
416
-55 ... + 150
150
-55 ... + 150
1.6 mm (0.063 in) from case for 10 s
300
Mounting torque
1.13/10
V
V
V
V
A
A
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
TO-247
TO-268
6g
4g
Test Conditions
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.5 V
TJ = 25°C
TJ = 125°C
32N50Q
30N50Q
±100
100
1
0.15
0.16
nA
µA
mA
Ω
Ω
PLUS 247TM
(IXFK)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l IXYS advanced low Qg process
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low RDS (on)
l Unclamped Inductive Switching (UIS)
rated
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98604D (06/02)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK32N50Q.PDF ] | |
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