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PDF IXFK30N100Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFK30N100Q2 | |
| Descripción | (IXFK30N100Q2 / IXFX30N100Q2) HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
IXFK 30N100Q2
IXFX 30N100Q2
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High
Low intrinsic Rg, low trr
dv/dt,
Low
Qg
Preliminary Data Sheet
VDSS = 1000 V
ID25
RDS(on)
=
=
30 A
0.40 Ω
trr ≤ 300 ns
Symbol
VVDDGSRS
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TTCC
= 25°C
= 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
1000
1000
±30
±40
30
120
30
V
V
V
V
A
A
A
60 mJ
4.0 J
20 V/ns
735
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6g
10 g
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VDVSS
TTJJ
=
=
25°C
125°C
PVGuSlse=
10 V,
test, t
ID
≤
3=000.5µs• ,IDd2u5 ty
cycle
d
≤
2
%
1000
2.5
V
5.0 V
±200 nA
50 µA
2 mA
0.40 Ω
PLUS 247TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99160(4/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK30N100Q2.PDF ] | |
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