DataSheet.jp

IXTH88N30P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH88N30P
部品説明 (IXTH88N30P / IXTT88N30P) PolarHT Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



Total 5 pages
		

No Preview Available !

IXTH88N30P Datasheet, IXTH88N30P PDF,ピン配置, 機能
www.DataSheet4U.com
PolarHTTM
Power MOSFET
IXTH 88N30P
IXTT 88N30P
RDS(on)
N-Channel Enhancement Mode
Preliminary Data Sheet
VDSS = 300
ID=25
= 88
40 m
V
A
Symbol
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
TO-268
TO-247 (IXTH)
Maximum Ratings
300 V
300 V
±20 V
88 A
75 A
220 A TO-268 (IXTT)
60 A
60 mJ
2.0 J
GS
D (TAB)
D (TAB)
10 V/ns
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
10 g
5g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
40 m
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99129A(01/04)

1 Page





ページ 合計 : 5 ページ
PDF
ダウンロード
[ IXTH88N30P.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IXTH88N30P

(IXTH88N30P / IXTT88N30P) PolarHT Power MOSFET

IXYS Corporation
IXYS Corporation
IXTH88N30P

PolarHT Power MOSFET

IXYS
IXYS

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap