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PDF IXTH88N15 Data sheet ( Hoja de datos )
| Número de pieza | IXTH88N15 | |
| Descripción | (IXTH88N15 / IXTT88N15) High Current Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
High Current
Power MOSFET
N-Channel Enhancement Mode
IXTH 88N15
IXTT 88N15
VDSS = 150 V
ID25
RDS(on)
=
=
88 A
22 mΩ
Symbol
V
DSS
VDGR
V
GS
V
GSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
T
JM
T
stg
TL
Md
Weight
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
150 V
150 V
±20 V
±30 V
88 A
352 A
88 A
50 mJ
1.5 J
5 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V DSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 250µA
2.0 4.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
1 mA
R DS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
22 m Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99034(04/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTH88N15.PDF ] | |
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