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PDF IXTT1N100 Data sheet ( Hoja de datos )
| Número de pieza | IXTT1N100 | |
| Descripción | (IXTH1N100 / IXTT1N100) High Voltage MOSFET | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTH 1N100
IXTT 1N100
V
DSS
ID25
RDS(on)
= 1000 V
= 1.5 A
= 11 Ω
Symbol
Test Conditions
V
DSS
VDGR
VGS
VGSM
ID25
I
DM
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
TC = 25°C
Mounting torque (TO-247)
TO-268
TO-247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
1000
±20
±30
1.5
6
V
V
V
V
A
A
1.5 A
6 mJ
200 mJ
3 V/ns
60 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
4g
6g
300 °C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 25 µA
1000
2.5
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 1.0A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
500 µA
11 Ω
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard packages
High voltage, Low RDS (on) HDMOSTM
process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
© 2002 IXYS All rights reserved
98886 (1/2)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTT1N100.PDF ] | |
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