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IXTP50N20P の電気的特性と機能

IXTP50N20PのメーカーはIXYS Corporationです、この部品の機能は「(IXTx50N20P) PolarHT Power MOSFET N-Channel Enhancement Mode」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP50N20P
部品説明 (IXTx50N20P) PolarHT Power MOSFET N-Channel Enhancement Mode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTP50N20P Datasheet, IXTP50N20P PDF,ピン配置, 機能
www.DataSheet4U.com
PolarHTTM
Power MOSFET
IXTQ 50N20P
IXTA 50N20P
IXTP 50N20P
N-Channel Enhancement Mode
Preliminary Data Sheet
VDSS =
ID25 =
=RDS(on)
200 V
50 A
60 m
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
200 V
200 V
±20 V
50 A
120 A
50 A
30 mJ
1.0 J
10 V/ns
360
-55 ... +175
175
-55 ... +125
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
5.5 g
4g
3g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t 300 µs, duty cycle d 2 %
50 60 m
G
DS
TO-220 (IXTP)
(TAB)
G DS
TO-263 (IXTA)
(TAB)
GS
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99156A(04/04)

1 Page





IXTP50N20P pdf, ピン配列
50
45
40
35
30
25
20
15
10
5
0
0
Fig . 1. Ou tp u t C h ar acte r is tics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5 3
V D S - V olts
3.5
50
45
40
35
30
25
20
15
10
5
0
0
Fig . 3. Ou tp u t Ch ar acte r is tics
@ 150ºC
VGS = 10V
9V
8V
7V
6V
5V
123 4567
V D S - V olts
8
Fig . 5. RD S(on) No r m aliz e d to
0.5 ID 25 V alu e vs . ID
4.2
3.8 VGS = 10V
3.4
3 TJ = 175ºC
2.6
2.2
TJ = 125ºC
1.8
1.4
1 TJ = 25ºC
0.6
0
10 20 30 40 50 60 70 80 90 100
I D - A mperes
© 2004 IXYS All rights reserved
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig . 2. Exte n d e d Ou tp u t C h ar acte r is tics
@ 25ºC
100
90 VGS = 10V
80
70 9V
60
50
8V
40
30
20 7V
10 6V
0
0 2 4 6 8 10 12 14 16 18 20
V D S - V olts
Fig . 4. RD S(on) No r m aliz e d to 0.5 ID 25
V alue vs . Jun ctio n Te m p e r atu r e
3.1
2.8 VGS = 10V
2.5
2.2
ID = 50A
1.9
1.6
ID = 25A
1.3
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
55
50
45
40
35
30
25
20
15
10
5
0
-50
Fig . 6. Dr ain Cu r r e n t vs . C as e
Te m pe rature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade
175


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部品番号部品説明メーカ
IXTP50N20P

(IXTx50N20P) PolarHT Power MOSFET N-Channel Enhancement Mode

IXYS Corporation
IXYS Corporation


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