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PDF IXGP16N60C2 Data sheet ( Hoja de datos )
| Número de pieza | IXGP16N60C2 | |
| Descripción | (IXGx16N60C2xx) HiPerFASTTM IGBT C2-Class High Speed IGBT | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBT
C2-Class High Speed
IGBT
Advance Technical Information
IXGA 16N60C2
IXGP 16N60C2
IXGA 16N60C2D1
IXGP 16N60C2D1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 40 A
= 3.0 V
= 35 ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ID110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C (IXG_16N60C2D1 diode)
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 22 Ω
Clamped inductive load
TC = 25°C
Mounting torque (M3.5 screw)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
TO-220
TO-263
D1
Maximum Ratings
600 V
600 V
±20 V
±30 V
40 A
16 A
11 A
100 A
ICM = 32
@0.8 VCES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
0.55/5 Nm/lb.in.
300 °C
260 °C
4g
2g
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 12 A, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
16N60C2
16N60C2D1
2.5
5.0 V
25 µA
50 µA
TJ=125°C
±100 nA
3.0 V
2.1 V
TO-263 (IXGA)
G
C
TO-220 (IXGP)
C (TAB)
GC E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Very high frequency IGBT
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99142A(3/04)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXGP16N60C2.PDF ] | |
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