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2MBI100SC-120 の電気的特性と機能

2MBI100SC-120のメーカーはFuji Electricです、この部品の機能は「1200V / 100A 2 in one-package」です。


製品の詳細 ( Datasheet PDF )

部品番号 2MBI100SC-120
部品説明 1200V / 100A 2 in one-package
メーカ Fuji Electric
ロゴ Fuji Electric ロゴ 




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2MBI100SC-120 Datasheet, 2MBI100SC-120 PDF,ピン配置, 機能
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2MBI100SC-120
IGBT Module
1200V / 100A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20 V
Collector Continuous Tc=25°C IC
150 A
current
Tc=80°C
100 A
1ms Tc=25°C IC pulse
300 A
Tc=80°C
200 A
-IC 100 A
1ms
-IC pulse
200 A
Max. power dissipation
PC
780 W
Operating temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage *1
Vis AC 2500 (1min. ) V
Screw torque
Mounting *2 3.5 N·m
Terminals *2 3.5 N·m
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Equivalent Circuit Schematic
C2E1
C1 E2
G1 E1
G2 E2
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Min.
5.5
Typ.
7.2
2.3
Max.
2.0
0.4
8.5
2.6
– 2.8 –
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Cies
Coes
Cres
ton
– 12000
– 2500 –
– 2200 –
– 0.35 1.2
tr – 0.25 0.6
Turn-off time
tr(i) – 0.1 –
toff – 0.45 1.0
Forward on voltage
tf – 0.08 0.3
VF – 2.3 3.0
– 2.0 –
Reverse recovery time trr – – 0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
Tc=25° C VGE=15V, IC=100A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=100A
VGE=±15V
RG=9.1 ohm
Tj=25°C
Tj=125°C
IF=100A
IF=100A, VGE=0V
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Characteristics
Min.
Typ.
––
––
– 0.05
Max.
0.16
0.33
Conditions
IGBT
Diode
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
mA
µA
V
V
pF
µs
V
µs
Unit
°C/W
°C/W
°C/W

1 Page





2MBI100SC-120 pdf, ピン配列
2MBI100SC-120
IGBT Module
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 9.1 ohm, Tj= 25°C
500 toff
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 9.1ohm, Tj= 125°C
toff
500
ton
tr
100
tf
50
0 50 100 150
Collector current : Ic [ A ]
5000
1000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C
ton
toff
tr
500
100
50
1
tf
10 100
Gate resistance : Rg [ohm]
300
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
70
Eon
60
50
40
30
20
10
0
1
Eoff
10
Gate resistance : Rg [ohm]
Err
100
300
ton
tr
tf
100
50
0 50 100 150
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1ohm
30
25
Eon(125°C)
20
Eon(25°C)
15
Eoff(125°C)
10
Eoff(25°C)
Err(125°C)
5
Err(25°C)
0
0 50 100 150 200
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>9.1ohm, Tj=<125°C
250
200
150
100
50
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]


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部品番号部品説明メーカ
2MBI100SC-120

1200V / 100A 2 in one-package

Fuji Electric
Fuji Electric


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