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PDF U637H256 Data sheet ( Hoja de datos )
| Número de pieza | U637H256 | |
| Descripción | CapStore 32K x 8 nvSRAM | |
| Fabricantes | Simteh | |
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U637H256
CapStore 32K x 8 nvSRAM
Features
Description
High-performance CMOS non- The U637H256 has two separate
volatile static RAM 32768 x 8 bits modes of operation: SRAM mode
25 ns Access Time
and nonvolatile mode. In SRAM
10 ns Output Enable Access
mode, the memory operates as an
Time
ICC = 15 mA typ. at 200 ns Cycle
Time
Unlimited Read and Write Cycles
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
to SRAM
mode SRAM functions are disab-
Automatic STORE to EEPROM led.
on Power Down using charge
The U637H256 is a fast static RAM
stored in an integrated capacitor
Software initiated STORE
Automatic STORE Timing
106 STORE cycles to EEPROM
100 years data retention in
(25 ns) with a nonvolatile electri-
cally erasable PROM (EEPROM)
element incorporated in each static
memory cell. The SRAM can be
read and written an unlimited num-
EEPROM
ber of times, while independent
Automatic RECALL on Power Up nonvolatile data resides in
Software RECALL Initiation
EEPROM. Data transfers from the
Unlimited RECALL cycles from SRAM to the EEPROM (the
EEPROM
Single 5 V ± 10 % Operation
Operating temperature range:
STORE operation) take place auto-
matically upon power down using
charge stored in an integrated
0 to 70 °C
capacitor. Transfers from the
-40 to 85°C
QS 9000 Quality Standard
EEPROM to the SRAM (the
RECALL operation) take place
(MIL STD 883C M3015.7)
automatically on power up. The
RoHS compliance and Pb- free U637H256 combines the high per-
Package: PDIP28 (600 mil)
formance and ease of use of a fast
SRAM with nonvolatile data inte-
grity.
STORE cycles also may be initia-
ted under user control via a soft-
ware sequence.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
The U637H256 is pin compatible
with standard SRAMs and standard
battery backed SRAMs.
Pin Configuration
Pin Description
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 PDIP 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Top View
March 31, 2006
STK Control #ML0056
Signal Name
A0 - A14
DQ0 - DQ7
E
G
W
VCC
VSS
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
1 Rev 1.0
1 page  
Read Cycle 1: Ai-controlled (during Read cycle: E = G = VIL, W = VIH)f
U637H256
Ai
DQi
Output
tcR (1)
Address Valid
ta(A) (2)
Previous Data Valid
tv(A) (9)
Output Data Valid
Read Cycle 2: G-, E-controlled (during Read cycle: W = VIH)g
Ai
E
G
DQi
Output
ICC
High Impedance
ACTIVE
STANDBY
tcR (1)
Address Valid
ta(A) (2)
ta(E) (3)
ten(E) (7)
ta(G) (4)
ten(G) (8)
tPU (10)
tdis(E) (5)
tPD (11)
tdis(G) (6)
Output Data Valid
No.
Switching Characteristics
Write Cycle
12 Write Cycle Time
13 Write Pulse Width
14 Write Pulse Width Setup Time
15 Address Setup Time
16 Address Valid to End of Write
17 Chip Enable Setup Time
18 Chip Enable to End of Write
19 Data Setup Time to End of Write
20 Data Hold Time after End of Write
21 Address Hold after End of Write
22 W LOW to Output in High-Zh, i
23 W HIGH to Output in Low-Z
Symbol
Alt. #1 Alt. #2 IEC
tAVAV
tWLWH
tAVWL
tAVWH
tELWH
tDVWH
tWHDX
tWHAX
tWLQZ
tWHQX
tAVAV
tcW
tw(W)
tWLEH tsu(W)
tAVEL
tsu(A)
tAVEH tsu(A-WH)
tsu(E)
tELEH
tw(E)
tDVEH tsu(D)
tEHDX
th(D)
tEHAX
th(A)
tdis(W)
ten(W)
Min.
25
20
20
0
20
20
20
10
0
0
5
March 31, 2006
STK Control #ML0056
5
Rev 1.0
Max.
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5 Page 
U637H256
Device Operation
The U637H256 has two separate modes of operation:
SRAM mode and nonvolatile mode. The memory ope-
rates in SRAM mode as a standard fast static RAM.
Data is transferred in nonvolatile mode from SRAM to
EEPROM (the STORE operation) or from EEPROM to
SRAM (the RECALL operation). In this mode SRAM
functions are disabled.
STORE cycles may be initiated under user control via a
software sequence and are also automatically initiated
when the power supply voltage level of the chip falls
below VSWITCH. RECALL operations are automatically
initiated upon power up and may also occur when the
VCC rises above VSWITCH, after a low power condition.
RECALL cycles may also be initiated by a software
sequence.
In order to prevent unneeded STORE operations, auto-
matic STORE will be ignored unless at least one
WRITE operation has taken place since the most
recent STORE or RECALL cycle. Software initiated
STORE cycles are performed regardless of whether or
not a WRITE operation has taken place.
SRAM READ and WRITE operations that are in pro-
gress after an automatic STORE cycle on power down
is requested are given time to complete before the
STORE operation is initiated.
During tDELAY multiple SRAM READ operations may
take place. If a WRITE is in progress it will be allowed a
time, tDELAY, to complete. Any SRAM WRITE cycles
requested after the VCC pin drops below VSWITCH will be
inhibited.
Automatic RECALL
SRAM READ
The U637H256 performs a READ cycle whenever E
and G are LOW and W is HIGH. The address specified
on pins A0 - A14 determines which of the 32768 data
bytes will be accessed. When the READ is initiated by
an address transition, the outputs will be valid after a
delay of tcR. If the READ is initiated by E or G, the out-
puts will be valid at ta(E) or at ta(G), whichever is later.
The data outputs will repeatedly respond to address
changes within the tcR access time without the need for
transition on any control input pins, and will remain
valid until another address change or until E or G is
brought HIGH or W is brought LOW.
SRAM WRITE
A WRITE cycle is performed whenever E and W are
LOW. The address inputs must be stable prior to
entering the WRITE cycle and must remain stable until
either E or W goes HIGH at the end of the cycle. The
data on pins DQ0 - 7 will be written into the memory if it
is valid tsu(D) before the end of a W controlled WRITE or
tsu(D) before the end of an E controlled WRITE.
It is recommended that G is kept HIGH during the
entire WRITE cycle to avoid data bus contention on the
common I/O lines. If G is left LOW, internal circuitry will
turn off the output buffers tdis (W) after W goes LOW.
Automatic STORE
During normal operation, the U637H256 will draw cur-
rent from VCC to charge up an integrated capacitor.
This stored charge will be used by the chip to perform a
single STORE operation. If the voltage on the VCC pin
drops below VSWITCH, the part will automatically discon-
nect the internal components from the external power
supply with a typical delay of 150 ns and initiate a
STORE operation with tPDSTORE max. 10 ms.
During power up, an automatic RECALL takes place. At
a low power condition (power supply voltage < VSWITCH)
an internal RECALL request may be latched. As soon
as power supply voltage exceeds the sense voltage of
VSWITCH, a requested RECALL cycle will automatically
be initiated and will take tRESTORE to complete.
If the U637H256 is in a WRITE state at the end of
power up RECALL, the SRAM data will be corrupted.
To help avoid this situation, a 10 kΩ resistor should be
connected between W and power supply voltage.
Software Nonvolatile STORE
The U637H256 software controlled STORE cycle is
initiated by executing sequential READ cycles from six
specific address locations. By relying on READ cycles
only, the U637H256 implements nonvolatile operation
while remaining compatible with standard 32K x 8
SRAMs. During the STORE cycle, an erase of the pre-
vious nonvolatile data is performed first, followed by a
parallel programming of all the nonvolatile elements.
Once a STORE cycle is initiated, further inputs and out-
puts are disabled until the cycle is completed.
Because a sequence of addresses is used for STORE
initiation, it is important that no other READ or WRITE
accesses intervene in the sequence or the sequence
will be aborted.
To initiate the STORE cycle the following READ
sequence must be performed:
1. Read addresses 0E38 (hex) Valid READ
2. Read addresses 31C7 (hex) Valid READ
3. Read addresses 03E0 (hex) Valid READ
4. Read addresses 3C1F (hex) Valid READ
5. Read addresses 303F (hex) Valid READ
6. Read addresses 0FC0 (hex) Initiate STORE
Cycle
March 31, 2006
STK Control #ML0056
11
Rev 1.0
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet U637H256.PDF ] | |
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