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PDF IRS2011PBF Data sheet ( Hoja de datos )

Número de pieza IRS2011PBF
Descripción HIGH AND LOW SIDE DRIVER
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Data Sheet No.PD60221
IRS2011(S)PbF
Features
HIGH AND LOW SIDE DRIVER
Floating channel designed for bootstrap operation Product Summary
Fully operational up to +200 V
Tolerant to negative transient voltage, dV/dt immune
VOFFSET
200 V max.
Gate drive supply range from 10 V to 20 V
Independent low-side and high-side channels
Input logic HIN/LIN active high
IO+/-
1.0 A /1.0 A typ.
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
VOUT
10 V - 20 V
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
ton/off
60 ns typ.
RoHS compliant
Applications
Delay Matching 20 ns max.
Audio Class D amplifiers
High power DC-DC SMPS converters
DC motor drive
Packages
Description
The IRS2011 is a high power, high speed power MOSFET
driver with independent high and low-side referenced output
channels, ideal for Audio Class D and DC-DC converter appli-
IRS2011
IRS2011S
cations. Logic inputs are compatible with standard CMOS or
8-Lead PDIP
8-Lead SOIC
LSTTL output, down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channel can be used to drive an N-
channel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200 V
HIN
LIN
COM
5
HIN
LIN
COM
8 LO
VS 4
HO
VB
1
VCC
TO
LOAD
VCC
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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IRS2011PBF pdf
IRS2011(S)PbF
50%
trise
90%
ton(H)
10%
DM1
ton(L)
10%
50%
HIN / LIN
tfall
90%
toff(H)
10%
HO
toff(L)
DM2
90%
LO
www.irf.com
Figure 1. Timing Diagram
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IRS2011PBF arduino
IRS2011(S)PbF
500
400
300
200
100
Max.
0
-50 -25
0 25 50 75 100 125
Temperature (oC)
Figure 12A. Offset Supply Leakage
Current vs. Temperature
500
400
300
200
Max.
100
0
50 100 150 200 250 300
VB Boost Voltage (V)
Figure 12B. Offset Supply Leakage Current
vs. Supply Voltage
600
500
400
300
200
100
0
-50 -25
0 25 50 75 100 125
Temperature (oC)
Figure 13A. VBS Supply Current
vs. Temperature
www.irf.com
600
500
400
300
Max.
200
Typ.
100
0
10 12 14 16 18
VBS Supply Voltage (V)
Figure 13B. VBS Supply Current
vs. Supply Voltage
20
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