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IRHNA63164のメーカーはInternational Rectifierです、この部品の機能は「(IRHNA67164 / IRHNA63164) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT」です。 |
部品番号 | IRHNA63164 |
| |
部品説明 | (IRHNA67164 / IRHNA63164) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRHNA63164ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD-96959A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA67164 100K Rads (Si)
IRHNA63164 300K Rads (Si)
RDS(on)
0.018Ω
0.018Ω
ID
56A*
56A*
IRHNA67164
150V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
SMD-2
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
56*
49
224
250
2.0
±20
283
56
25
7.5
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
02/16/06
1 Page PRraed-IirartaiodniaCtiohnaracteristics
IRHNA67164
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si) Units
Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Sourcee
On-State Resistance (SMD-2)
150
2.0
—
—
—
—
—
—
4.0
100
-100
10
0.019
0.018
V
nA
µA
Ω
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 120V, VGS= 0V
VGS = 12V, ID = 49A
VGS = 12V, ID = 49A
VSD Diode Forward Voltage
Part numbers IRHNA67164 and IRHNA63164
— 1.2 V
VGS = 0V, ID = 56A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0 150
-5 150
-10 150
-15 150
-20 150
Ion Xe
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0 150
-5 150
-9 150
-10 140
-11 50
-15 40
Ion Au
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0 50
-5 50
-10 30
180
150
120
90
60
30
0
0
Kr
Xe
Au
-5 -10 -15
VGS
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
3Pages IRHNA67164
Pre-Irradiation
80
LIMITED BY PACKAGE
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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IRHNA63160 | (IRHNA63160 / IRHNA67160) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT | International Rectifier |
IRHNA63164 | (IRHNA67164 / IRHNA63164) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT | International Rectifier |