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PDF IRFG5210 Data sheet ( Hoja de datos )
| Número de pieza | IRFG5210 | |
| Descripción | Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 91664B
IRFG5210
POWER MOSFET
200V, Combination 2N-2P-CHANNEL
THRU-HOLE (MO-036AB)
HEXFET® MOSFETTECHNOLOGY
Product Summary
Part Number RDS(on)
IRFG5210
1.6Ω
IRFG5210
1.6Ω
ID
0.68A
-0.68A
CHANNEL
N
P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Pre-Irradiation
N-Channel
P-Channel
0.68 -0.68
0.4 -0.4
2.72➀
-2.72➄
14 14
0.011
0.011
±20 ±20
64➁ 110➅
——
——
20➂ 27~
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
1
04/17/02
1 page  
IRFG5210
N-Channel
Q1,Q3
300
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
240 Coss = Cds + Cgd
20 ID = 0.68A
16
VDS= 160V
V DS= 100V
V DS= 40V
180 Ciss
120 Coss
60 Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 1136a&b
0
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150° C
1
TJ = 25 ° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100us
1
1ms
10ms
TC= 25 °C
TJ = 150 °C
Single Pulse
0.1
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page 
VDS
L
RG
-2V0GVS
tp
D .U .T.
IA S
0 .0 1Ω
D R IV E R
P-Channel
Q2,Q4
300
VDD
A
240
180
IRFG5210
TOP
ID
-0.30A
-0.43A
BOTTOM-0.68A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
120
60
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
-1120VV
.2µF
50KΩ
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRFG5210.PDF ] | |
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