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IRFB4321PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFB4321PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4321PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD - 97103
IRFB4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12m:
15m:
83A
D
S
D
G
TO-220AB
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case g
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient g
Max.
83 c
59
330
330
2.2
±30
120
-55 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
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1
6/23/06
1 Page 1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.1
5.0V
≤ 60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
0.1
3.0
TJ = 25°C
VDS = 25V
≤ 60µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
7000
6000
5000
4000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
3000
2000
Coss
1000
0
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
IRFB4321PbF
10 5.0V
1
0.1
≤ 60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 50A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 50A
16
12
VDS= 120V
VDS= 75V
VDS= 30V
8
4
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB4321PbF
6.0
ID = 1.0A
ID = 1.0mA
5.0 ID = 250µA
40
30
4.0
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
20
10
IF = 33A
VR = 128V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
40 3200
2800
30 2400
2000
20 1600
10
IF = 50A
VR = 128V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
1200
800
IF = 33A
VR = 128V
400 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
3200
2800
2400
2000
1600
1200
800
IF = 50A
VR = 128V
400 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRFB4321PBF | HEXFET Power MOSFET | International Rectifier |