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IRFB4227PBFのメーカーはInternational Rectifierです、この部品の機能は「PDP SWITCH」です。 |
部品番号 | IRFB4227PBF |
| |
部品説明 | PDP SWITCH | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4227PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 97035D
IRFB4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
VDS max
Key Parameters
200
V
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
240
19.7
130
V
m:
A
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
TJ max
175 °C
Reliable Operation
DD
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
l Class-D Audio Amplifier 300W-500W
G
S
S
GD
TO-220AB
(Half-bridge)
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes through are on page 8
www.irf.com
Max.
±30
65
46
260
130
330
190
2.2
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/10/07
1 Page VGS
TOP
15V
10V
8.0V
100 BOTTOM 7.0V
7.0V
10
≤ 60µs PULSE WIDTH
Tj = 25°C
0.1 1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
100.0
VDS = 25V
≤ 60µs PULSE WIDTH
TJ = 175°C
10.0
1.0 TJ = 25°C
0.1
3.0
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
1000
900
800
700
L = 220nH
C = 0.4µF
100°C
25°C
600
500
400
300
200
100
110 120 130 140 150 160 170
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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IRFB4227PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
7.0V
10
1
0.1
≤ 60µs PULSE WIDTH
Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
4.0
ID = 46A
VGS = 10V
3.0
2.0
1.0
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
1000
800
L = 220nH
C = Variable
100°C
25°C
600
400
200
0
130 140 150 160 170 180 190
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3
3Pages IRFB4227PbF
+
-
RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor Cuurrerennt t
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
IAS
Fig 19b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 20a. Switching Time Test Circuit
L
VCC
DUT
0
1K S
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 20b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Fig 21a. Gate Charge Test Circuit
6
Qgs1 Qgs2 Qgd
Qgodr
Fig 21b. Gate Charge Waveform
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB4227PBF | PDP SWITCH | International Rectifier |