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PDF IXTY01N100D Data sheet ( Hoja de datos )
| Número de pieza | IXTY01N100D | |
| Descripción | (IXTx01N100D) N-channel Depletion Mode MOSFETs | |
| Fabricantes | IXYS Corporation | |
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High Voltage MOSFET
IXTP 01N100D
IXTU 01N100D
N-Channel, Depletion Mode
IXTY 01N100D
Preliminary Data Sheet
VDSS = 1000 V
ID25 = 100 mA
=RDS(on) 110 Ω
Symbol
VDSX
VDGX
VGS
VGSM
IDSS
IDM
PD
TJ
TJM
Tstg
TL
TISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C; TJ = 25°C to 150°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TA = 25°C
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
Mounting torque
TO-220
TO-220
TO-251
TO-252
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSX
VGS(off)
VGS = -10 V, ID = 25 μA
VDS = 25V, ID = 25 μA
IGSS VGS = ± 20 VDC, VDS = 0
IDSX(off)
VDS = VDSX, VGS = -10 V
TJ = 125°C
RDS(on)
VGS = 0 V, ID = 50 mA
Note 1
ID(on)
VGS = 0 V, VDS = 25V
Note 1
Maximum Ratings
1000
1000
± 20
± 30
100
400
25
1.1
-55 ... +150
150
-55 ... +150
300
300
1.3 / 10
4
0.8
0.8
V
V
V
V
mA
mA
W
W
°C
°C
°C
°C
°C
Nm/lb.
g
g
g
Characteristic Values
min. typ. max.
1000
-2.5
V
-5 V
±100 nA
10 μA
250 μA
90 110 Ω
100 mA
TO-220 (IXTP)
GDS
TO-251 (IXTU)
D (TAB)
G
D
S
TO-252 (IXTY)
D (TAB)
G
S
D (TAB)
Pins: 1 - Gate 2 - Drain
3 - Source TAB - Drain
Features
z Normally ON mode
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Fast switching speed
Applications
z Level shifting
z Triggers
z Solid state relays
z Current regulators
© 2006 IXYS All rights reserved
98809B (01/06)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTY01N100D.PDF ] | |
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