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PDF GWM220-004P3 Data sheet ( Hoja de datos )
| Número de pieza | GWM220-004P3 | |
| Descripción | Three phase full bridge | |
| Fabricantes | IXYS Corporation | |
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GWM 220-004P3
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
VDSS = 40 V
RDSon = 2.0 mΩ
ID25 = 190 A
Preliminary data
L+
G1
S1
G2
S2
L-
G3 G5
S3 S5
G4 G6
S4 S6
L1
L2
L3
MOSFETs
Symbol
VDSS
VGS
ID25
ID90
IF25
IF90
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
TC = 25°C (diode)
TC = 90°C (diode)
Maximum Ratings
40 V
±20 V
190 A
145 A
125 A
80 A
Symbol
R
DSon
VGSth
IDSS
IGSS
Qg
Q
gs
Qgd
td(on)
t
r
td(off)
t
f
VF
trr
RthJC
R
thJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
VGS = 10 V
TVJ = 25°C
TVJ = 125°C
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 14 V; ID = 25 A
2.0 2.6 mΩ
3.2 mΩ
2 4V
1 µA
0.1 mA
0.2 µA
94 nC
18 nC
29 nC
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10 Ω
40 ns
85 ns
140 ns
90 ns
(diode) IF = 110 A; VGS= 0 V
(diode) IF = 20 A; -di/dt = 100 A/µs; VDS= 20 V
with heat transfer paste
1.0 1.6 V
70 ns
0.85 K/W
1.1 K/W
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- logic level gate control
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GWM220-004P3.PDF ] | |
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