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IXTY01N100 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTY01N100
部品説明 High Voltage MOSFET N-Channel
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTY01N100 Datasheet, IXTY01N100 PDF,ピン配置, 機能
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High Voltage MOSFET
N-Channel, Enhancement Mode
IXTU 01N100
IXTY 01N100
V
DSS
I
D25
RDS(on)
= 1000 V
= 100mA
= 80
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
PD
T
J
TJM
Tstg
TL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C; TJ = 25°C to 150°C
TC = 25°C, pulse width limited by max. TJ
TC = 25°C
1.6 mm (0.063 in) from case for 5 s
Maximum Ratings
01N100
1000
1000
±20
±30
100
400
25
-55 ... +150
150
-55 ... +150
300
0.8
V
V
V
V
mA
mA
W
°C
°C
°C
°C
g
TO-251 AA
G
D
S
TO-252 AA
D (TAB)
G
S
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 25 µA
1000
VDS = VGS, ID = 25 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = ID25
Pulse test, t 300 ms, duty cycle d 2 %
2
60
V
V
4.5 V
±50 nA
10 µA
200 µA
80
Features
l Internationalstandardpackages
JEDEC TO-251 AA, TO-252 AA
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Fast switching times
Applications
l Level shifting
l Triggers
l Solid state relays
l Current regulators
© 2001 IXYS All rights reserved
98812B (11/01)

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