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SFU9130のメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。 |
部品番号 | SFU9130 |
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部品説明 | Advanced Power MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSFU9130ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
www.DataSheet4U.com
Advanced Power MOSFET
SFR/U9130
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
Lower RDS(ON) : 0.225 Ω (Typ.)
BVDSS = -100 V
RDS(on) = 0.3 Ω
ID = -9.8 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O2
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
-100
-9.8
-6.9
39
+_ 20
320
-9.8
5.7
-6.5
2.5
57
0.46
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.19
50
110
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1 Page P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V GS
Top : -15V
- 10V
- 8.0 V
101 - 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
-VDS , Drain-Source Voltage [V]
101
Fig 3. On-Resistance vs. Drain Current
1.0
0.8
0.6
VGS = -10 V
0.4
0.2
VGS = -20 V @ Note : TJ = 25 oC
0.0
0
7 14 21 28 35 42
-ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1500
C = C + C ( C = shorted )
iss gs gd ds
Coss= Cds+ Cgd
Crss= Cgd
1000
C
iss
C oss
500
C
rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
-VDS , Drain-Source Voltage [V]
SFR/U9130
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
3. 250 µs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = -20 V
10 VDS = -50 V
V = -80 V
DS
5
@ Notes : ID =-10.5 A
0
0 5 10 15 20 25 30 35
QG , Total Gate Charge [nC]
3Pages SFR/U9130
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Compliment of DUT
(N-Channel)
•dv/dt controlled by “RG”
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
Vf
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
SFU9130 | Advanced Power MOSFET | Fairchild Semiconductor |