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IXKG25N80C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKG25N80C
部品説明 CoolMOS Power MOSFET ISO264
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXKG25N80C Datasheet, IXKG25N80C PDF,ピン配置, 機能
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ADVANCE TECHNICAL INFORMATION
CoolMOSTM Power MOSFET IXKG 25N80C
ISO264TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low RDS(on), High Voltage MOSFET
VDSS
ID25
RDS(on)
= 800 V
= 25 A
= 150 m
Symbol
Test Conditions
VDSS
VGS
ID25
ID90
ID(RMS)
EEAARS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
TJ = 25°C to 150°C
Continuous
TC = 25°C
TC = 90°C
Package lead current limit
IIoo
=
=
10A,
20A
TC
=
25°C
VDS < VDSS, IF 17 A, TVJ = 150°C
dIR/dt = 100 A/µs
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting torque
Maximum Ratings
800 V
±20 V
25 A
9A
45 A
690 mJ
0.5 mJ
6 V/ns
ISO264TM
G
D
S
G = Gate,
S = Source
D = Drain,
* Patent pending
(TAB)
250 W
-55 ... +150
150
-55 ... +125
°C
°C
°C
300 °C
2500
V~
0.9 / 6 Nm/lb-in
8g
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z 3RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<40pF)
Symbol
RDS(on)
VGS(th)
IDSS
IGSS
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
VGS = 10 V, ID = ID90, Note 1
VGS = 10 V, ID = ID90, Note 1 TJ = 125°C
126 150 m
297 m
Applications
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
z Inductive Heating
VDS = VGS, ID = 2 mA
VDS = VDSS
VGS = 0 V
VGS = ±20 VDC, VDS = 0
TJ = 25°C
TJ = 125°C
2 4V
Advantages
50 µA
10 µA z Easy assembly
z Space savings
±200 nA z High power density
© 2003 IXYS All rights reserved
CoolMOS is a trademark of Infineon
Technology.
DS99099(10/03)

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