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PDF IXGH28N120B Data sheet ( Hoja de datos )
| Número de pieza | IXGH28N120B | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS Corporation | |
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High Voltage IGBT
IXGH 28N120B
IXGT 28N120B
VCES = 1200 V
IC25 = 50 A
VCE(sat) = 3.5 V
tfi(typ) = 160 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
50
28
150
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
ICM = 120
@ 0.8 VCES
PC TC = 25°C
250
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA , VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = VCES, VGE= 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
1200
2.5
V
5V
25 µA
VCE = 0 V, VGE = ±20 V
IC = 28A, VGE = 15 V
TJ = 125°C
±100
2.8
2.75
3.5
nA
V
V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Low switching losses, low V(sat)
MOS Gate turn-on
- drive simplicity
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserved
DS98987E(04/04)
1 page  
IXGH 28N120B
IXGT 28N120B
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
450
td(off)
400 tfi - - - - - -
IC = 56A
350
RG = 5Ω
VGE = 15V
IC = 14A
300 VCE = 960V
250 IC = 28A
200
150 IC = 14A
IC = 56A
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
Fig. 14. Gate Charge
16
14 VCE = 600V
I C = 28A
12 I G= 10mA
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
140
120
100
80
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
60
40 TJ = 125ºC
RG = 5Ω
20 dV/dT < 10V/ns
0
100 300 500 700 900
VC E - Volts
1100 1300
Fig. 17. Maxim um Transient Therm al Resistance
1.00
0.50
0.10
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
5 Page | ||
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| PDF Descargar | [ Datasheet IXGH28N120B.PDF ] | |
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