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1N5811USのメーカーはMicrosemi Corporationです、この部品の機能は「(1N5807US - 1N5811US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS」です。 |
部品番号 | 1N5811US |
| |
部品説明 | (1N5807US - 1N5811US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS | ||
メーカ | Microsemi Corporation | ||
ロゴ | |||
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SCOTTSDALE DIVISION
1N5807US thru 1N5811US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to
MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure
cannot be tolerated. These industry-recognized 6.0 Amp rated rectifiers for working
peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded package configurations (see separate data sheet
for 1N5807 thru 1N5811). Microsemi also offers numerous other rectifier products
to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast, and ultrafast device types in both through-
hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “E”
or D-5B
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5807 to 1N5811 series
• Voidless-hermetically-sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/477
• Axial-leaded equivalents also available (see separate
data sheet for 1N5807 thru 1N5811)
• Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Operating Temperature: -65oC to +175oC.
• Storage Temperature: -65oC to +175oC.
• Average Rectified Forward Current (IO): 6 Amps @
TEC = 75ºC End Cap temperature (see note 1)
• Thermal Resistance: 10 ºC/W junction to end cap
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Solder temperature: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
• MARKING & POLARITY: Cathode band only
• Tape & Reel option: Standard per EIA-481-B
• Weight: 539 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100µA
VBR
VOLTS
AVERAGE
RECTIFIED
CURRENT
IO1
@TEC=75ºC
(Note 1)
AMPS
1N5807US
50
60
6.0
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55ºC
(Note 2)
AMPS
3.0
MAXIMUM
FORWARD
VOLTAGE
@4A
(8.3 ms pulse)
VF
VOLTS
25oC 100oC
0.875 0.800
REVERSE
CURRENT
(MAX)
@ VRWM
IR
µA
25oC 100oC
5 150
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
AMPS
125
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
ns
30
1N5809US
100
110
6.0
3.0 0.875 0.800 5 150
125
30
1N5811US
150
160
6.0
3.0 0.875 0.800 5 150
125
30
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
Copyright 2004
1-14-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1 Page SCOTTSDALE DIVISION
1N5807US thru 1N5811US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
FIGURE 4
MULTIPLE SURGE CURRENT vs. DURATION
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
been identified as “D-5B”
BL
BD
ECT
S
INCHES
MIN MAX
.205 .225
.137 .142
.019 .028
.003 ---
mm
MIN MAX
5.21 5.72
3.48 3.61
0.48 0.711
0.08 ---
PAD LAYOUT
INCHES
mm
A 0.288
7.32
B 0.070
1.78
C 0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
Copyright 2004
1-14-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
3Pages | |||
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1N5811U | Aerospace 6 A fast recovery rectifier | ST Microelectronics |
1N5811US | (1N5807US - 1N5811US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS | Microsemi Corporation |
1N5811US | Diode Switching 150V 6A 2-Pin SMD | New Jersey Semiconductor |
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