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PDF NSS40200UW6T1G Data sheet ( 特性 )

部品番号 NSS40200UW6T1G
部品説明 Low VCE(sat) PNP Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 

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NSS40200UW6T1G Datasheet, NSS40200UW6T1G PDF,ピン配置, 機能
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NSS40200UW6T1G
40 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−40 Vdc
−40 Vdc
−7.0 Vdc
−2.0 Adc
−4.0 A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
875 mW
7.0 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
143
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 2)
1.5 W
11.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
85
°C/W
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 2)
23
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Notes 2 & 3)
3.0
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
http://onsemi.com
−40 VOLTS
4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 100 mW
COLLECTOR
1, 2, 5, 6
3
BASE
E
Pin 1
4
EMITTER
C
WDFN6
CASE 506AP
MARKING DIAGRAM
16
2 VA MG 5
3G4
VA = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NSS40200UW6T1G WDFN6
3000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 0
1
Publication Order Number:
NSS40200UW6/D

1 Page





NSS40200UW6T1G pdf, ピン配列
NSS40200UW6T1G
0.15
IC/IB = 10
VCE(sat) = 150°C
0.30
0.25
IC/IB = 100
VCE(sat) = −55°C
0.10 0.20
0.15 25°C
25°C
0.05 0.10 150°C
−55°C
0
0.001
0.01 0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.05
0
0.001
0.01 0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
700
600
500
400
300
200
100
0.001
150°C (5 V)
150°C (2 V)
25°C (5 V)
25°C (2 V)
−55°C (5 V)
−55°C (2 V)
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
1.1
1.0 IC/IB = 10
0.9 −55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
10 0.001
0.01 0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9 VCE = −1.0 V
−55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.1
0.001
0.01 0.1 1.0
IC, COLLECTOR CURRENT (A)
10
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
10 mA
0.8
100 mA
IC = 500 mA
0.6
0.4
0.2
0
0.01
300 mA
0.1 1.0
10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
http://onsemi.com
3
100


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