DataSheet.jp

NSS12200WT1G の電気的特性と機能

NSS12200WT1GのメーカーはON Semiconductorです、この部品の機能は「Low VCE(sat) PNP Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 NSS12200WT1G
部品説明 Low VCE(sat) PNP Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




このページの下部にプレビューとNSS12200WT1Gダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

NSS12200WT1G Datasheet, NSS12200WT1G PDF,ピン配置, 機能
www.DataSheet4U.com
NSS12200WT1G
12 V, 3 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low VCE(s) (170 mV Typical @ 1 A)
Small Size
This is a Pb−Free Device
Benefits
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
http://onsemi.com
12 VOLTS
3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 163 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
1
SC−88/SOT−363
CASE 419B
STYLE 20
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
VCEO
−12 Vdc
Collector-Base Voltage
VCBO
−12 Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−2.0
−3.0
Adc
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
DEVICE MARKING
6
V2M
G
1
V2 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NSS12200WT1G
SOT−363 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NSS12200W/D

1 Page





NSS12200WT1G pdf, ピン配列
NSS12200WT1G
0.5 0.5
0.4 0.4
2A
0.3 0.3
0.2 1 A
0.1
IC = 100 mA
800 mA
500 mA
0
1 10 100
IB, BASE CURRENT (mA)
Figure 1. Collector Emitter Voltage vs. Base Current
0.2
IC/IB = 100
0.1
0 IC/IB = 10
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Voltage vs. Collector Current
400
125°C
300
VCE = 1.5 V
200 25°C
100 TA = −55°C
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain vs. Collector
Current
1.0
0.9
IC/IB = 10
0.8
IC/IB = 100
0.7
0.6
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
1
Figure 5. Base Emitter Saturation Voltage vs.
Base Current
1.0
0.9
0.8 TA = −55°C
0.7
25°C
0.6
0.5
0.4 125°C
0.3
0.001
0.01
VCE = 1.5 V
0.1 1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Voltage vs. Collector
Current
10
dc
1
1 s 100 ms 10 ms
1 ms
0.1
SINGLE PULSE TA = 25°C
0.01
0.1 1
10
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 6. Safe Operating Area
http://onsemi.com
3


3Pages


NSS12200WT1G 電子部品, 半導体
NSS12200WT1G
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NSS12200W/D

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ NSS12200WT1G データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
NSS12200WT1G

Low VCE(sat) PNP Transistor

ON Semiconductor
ON Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap