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4N27X の電気的特性と機能

4N27XのメーカーはISOCOM COMPONENTSです、この部品の機能は「(4N2X) OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT」です。


製品の詳細 ( Datasheet PDF )

部品番号 4N27X
部品説明 (4N2X) OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
メーカ ISOCOM COMPONENTS
ロゴ ISOCOM COMPONENTS ロゴ 




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4N27X Datasheet, 4N27X PDF,ピン配置, 機能
www.DataSheet4U.com
4N25X, 4N26X, 4N27X, 4N28X
4N25, 4N26, 4N27, 4N28
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
l BSI approved - Cetificate No. 8001
DESCRIPTION
The4N25,4N26,4N27,4N28series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l All electrical parameters 100% tested
l Custom electrical selections available
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
2.54 Dimensions in mm
1
7.0
6.0 2
3
1.2
7.62
6.62 4.0
3.0
3.0
0.5
0.5
3.35
7.62
0.26
6
5
4
13°
Max
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BV
ECO
Power Dissipation
30V
70V
6V
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail [email protected]
http://www.isocom.com
5/2/03
DB91028m-AAS/A4

1 Page





4N27X pdf, ピン配列
Collector Power Dissipation vs. Ambient Temperature
200
150
100
50
0
-30 0 25 50 75 100 125
Ambient temperature T ( °C )
A
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
VTACE==205.°5CV
2 5 10 20
Forward current I (mA)
F
50
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
VT CE==2150°CV
A
2 5 10 20
Forward current IF (mA)
50
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I = 10mA
F
V = 10V
CE
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
I = 50mA
F
0.10 IC = 2mA
1.0
0.5
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
5/2/03
0.08
0.06
0.04
0.02
0
-30
0 25 50 75 100
Ambient temperature TA ( °C )
DB91028m-AAS/A4


3Pages





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共有リンク

Link :


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