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PDF BF1206F Data sheet ( Hoja de datos )
| Número de pieza | BF1206F | |
| Descripción | Dual N-channel dual-gate MOS-FET | |
| Fabricantes | NXP Semiconductors | |
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BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Two low noise gain controlled amplifiers in a single package
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
s Suited for 3 volt applications
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
Table 8: Dynamic characteristics for amplifier A …continued
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Xmod cross modulation
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.
8.1.1 Graphs for amplifier A
Min Typ
[2]
Max Unit
88 -
- 85
92 97
-
-
-
dBµV
dBµV
dBµV
15
ID
(mA)
10
(1) (2)
001aad896
(3)
5 (4)
0
0 0.4 0.8 1.2
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj = 25 °C.
1.6 2.0
VG1−S (V)
Fig 2. Amplifier A: transfer characteristics; typical
values
16
ID
(mA)
12
8
4
(1)
001aad897
(2)
(3)
(4)
(5)
(6)
(7)
0
01234
VDS (V)
(1) VG1-S(A) = 1.4 V.
(2) VG1-S(A) = 1.3 V.
(3) VG1-S(A) = 1.2 V.
(4) VG1-S(A) = 1.0 V.
(5) VG1-S(A) = 0.9 V.
(6) VG1-S(A) = 0.85 V.
(7) VG1-S(A) = 0.8 V.
VG2-S = 2.5 V; Tj = 25 °C.
Fig 3. Amplifier A: output characteristics; typical
values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
Table 11: Dynamic characteristics for amplifier B …continued
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min Typ
Xmod cross modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [2]
at 0 dB AGC
89
-
at 10 dB AGC
- 85
at 40 dB AGC
93 98
Max Unit
- dBµV
- dBµV
- dBµV
[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.
8.3.1 Graphs for amplifier B
15
ID
(mA)
10
(1) (2)
001aad911
(3)
5 (4)
0
0 0.4 0.8 1.2
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
1.6 2.0
VG1−S (V)
Fig 17. Amplifier B: transfer characteristics; typical
values
16
ID
(mA)
12
(1)
001aad912
(2)
(3)
8 (4)
(5)
4 (6)
(7)
0
01234
VDS (V)
(1) VG1-S(B) = 1.3 V.
(2) VG1-S(B) = 1.2 V.
(3) VG1-S(B) = 1.1 V.
(4) VG1-S(B) = 1.0 V.
(5) VG1-S(B) = 0.9 V.
(6) VG1-S(B) = 0.85 V.
(7) VG1-S(B) = 0.8 V.
VG2-S = 2.5 V; Tj = 25 °C.
Fig 18. Amplifier B: output characteristics; typical
values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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