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PDF DIM200WLS12-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM200WLS12-A000 | |
| Descripción | IGBT Chopper Module - Upper Arm Control | |
| Fabricantes | Dynex Semiconductor | |
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DIM200WLS12-A000
DIM200WLS12-A000
IGBT Chopper Module - Lower Arm Control
Replaces February 2004 version, issue FDS5697-2.0
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
FDS5697-3.0 June 2004
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(Measured at the power busbars and not the auxiliary terminals)
7(E2)
6(G2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WLS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As:
DIM200WLS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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DIM200WLS12-A000
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 10V
50 VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
45
Tc = 125˚C,
Vcc = 600V,
40 Rg = 4.7 Ohms
35
30
25
20
15
10
5 Eon
Eoff
Erec
0
0
50
100 150
200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
Common emitter
Tcase = 125˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 10V
50 VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
55
Tc = 125˚C,
50
Vcc = 600V,
IC = 200A
45
40
35
30
25
20
15
10
5
Eon
Eoff
0 Erec
4 6 8 10 12
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DIM200WLS12-A000.PDF ] | |
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