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DIM200MKS12-A000のメーカーはDynex Semiconductorです、この部品の機能は「Igbt Modules - Chopper」です。 |
部品番号 | DIM200MKS12-A000 |
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部品説明 | Igbt Modules - Chopper | ||
メーカ | Dynex Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとDIM200MKS12-A000ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
Replaces November 2002, issue DS5552-1.2
FEATURES
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Baseplate
APPLICATIONS
I Choppers
I Motor Controllers
I Induction Heating
I Resonant Converters
I Power Supplies
DIM200MKS12-A000
DIM200MKS12-A000
IGBT Chopper Module
DS5552-1.2 November 2002
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
1(K,E)
2(A)
3(C)
9(C1)
4(G1)
5(E1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MKS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The module incorporates a high current rated
freewheel diode. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MKS12-A000
Note: When ordering, please use the whole part number.
Fig. 1 Chopper circuit diagram - upper arm controlled
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
1 Page www.DataSheet4U.com
DIM200MKS12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Al2O3
Cu
Creepage distance:
22mm
Clearance:
12mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per arm)
Rth(j-c)
Rth(c-h)
Tj
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Thermal resistance - case to heatsink
(per module)
Junction temperature
T Storage temperature range
stg
- Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Min. Typ. Max. Units
- - 87 ˚C/kW
- - 194 ˚C/kW
- - 15 ˚C/kW
- - 150 ˚C
- - 125 ˚C
–40 - 125 ˚C
- - 5 Nm
- - 2 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/10
3Pages www.DataSheet4U.com
DIM200MKS12-A000
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 10V
50 VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
45
Tc = 125˚C,
Vcc = 600V,
40 Rg = 4.7 Ohms
35
30
25
20
15
10
5 Eon
Eoff
Erec
0
0
50
100 150
200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
Common emitter
Tcase = 125˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 10V
50 VGE = 12V
VGE = 15V
VGE = 20V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
55
Tc = 125˚C,
50
Vcc = 600V,
IC = 200A
45
40
35
30
25
20
15
10
5
Eon
Eoff
0 Erec
4 6 8 10 12
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
DIM200MKS12-A000 | Igbt Modules - Chopper | Dynex Semiconductor |