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PDF IXTQ23N60Q Data sheet ( Hoja de datos )
| Número de pieza | IXTQ23N60Q | |
| Descripción | Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Power MOSFETs
Q-Class
IXTQ 23N60Q
VDSS = 600 V
ID25 = 23 A
RDS(on) = 0.32 Ω
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
Preliminary Data Sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
600 V
600 V
±30 V
±40 V
23 A
92 A
23 A
30 mJ
1.5 J
5 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
600 V
VGS(th)
VDS = VGS, ID = 250 µA
2.5 4.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
1 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.32 Ω
TO-3P (IXTQ)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z IXYS advanced low gate charge
process
z International standard package
z Low gate charge and capacitance
- easier to drive
- faster switching
z Low RDS (on)
z Unclamped Inductive Switching (UIS)
rated
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99080(08/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTQ23N60Q.PDF ] | |
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