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IXBT42N170 の電気的特性と機能

IXBT42N170のメーカーはIXYS Corporationです、この部品の機能は「(IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXBT42N170
部品説明 (IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXBT42N170 Datasheet, IXBT42N170 PDF,ピン配置, 機能
www.DataSheet4U.com
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 42N170
IXBT 42N170
VCES
IC25
VCE(sat)
= 1700 V
= 75 A
= 3.6 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1700
1700
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
75
42
180
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load
ICM =
90
VCES = 1350
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 non repetitive
10
PC TC = 25°C
360
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
350
260
V
V
V
V
A
A
A
A
V
µs
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6g
4g
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Low conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1700
2.5
V
5.5 V
TJ = 25°C
TJ = 125°C
50 µA
1.5 mA
±100 nA
TJ = 125°C
3.6 V
3.7 V
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Capacitor discharge circuits
Advantages
z Lower conduction losses than MOSFETs
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserve
DS98710B(12/04)

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IXBT42N170 pdf, ピン配列
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characte ristics
@ 25 Deg. C
VGE = 15V
13V
11V
9V
7V
5V
1 23 45 6
VC E - Volts
7
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
11V
9V
7V
5V
1 2 34 5 6
VCE - Volts
7
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
10
9 TJ = 25ºC
8
7
IC = 84A
42A
21A
6
5
4
3
2
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2004 IXYS All rights reserve
IXBH 42N170
IXBT 42N170
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
250
225
VGE = 17V
15V
13V
200
175
150 11V
125
100 9V
75
50
25 7V
0
0 2 4 6 8 10 12 14 16 18
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.8
1.7 VGE = 15V
1.6
1.5 IC = 84A
1.4
1.3
1.2 IC = 42A
1.1
1.0
0.9
0.8 IC = 21A
0.7
-50
-25
0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Adm ittance
80
70
60
50
40
30
20
TJ = 125ºC
25ºC
10 -40ºC
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
VG E - Volts


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共有リンク

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部品番号部品説明メーカ
IXBT42N170

(IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

IXYS Corporation
IXYS Corporation
IXBT42N170A

(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor

IXYS Corporation
IXYS Corporation


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