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PDF IXBH42N170 Data sheet ( Hoja de datos )
| Número de pieza | IXBH42N170 | |
| Descripción | (IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS Corporation | |
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High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 42N170
IXBT 42N170
VCES
IC25
VCE(sat)
= 1700 V
= 75 A
= 3.6 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
75
42
180
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM =
90
VCES = 1350
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10
PC TC = 25°C
360
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
350
260
V
V
V
V
A
A
A
A
V
µs
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6g
4g
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Low conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1700
2.5
V
5.5 V
TJ = 25°C
TJ = 125°C
50 µA
1.5 mA
±100 nA
TJ = 125°C
3.6 V
3.7 V
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Capacitor discharge circuits
Advantages
z Lower conduction losses than MOSFETs
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserve
DS98710B(12/04)
1 page  
IXBH 42N170
IXBT 42N170
10000
1000
100
Fig. 13. Capacitance
f = 1 MHz
Cies
Coes
10
0
1
Cres
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 14. Maxim um Transient Therm al Resistance
0.1
0.01
0.1
1 10
Pulse Width - milliseconds
100
1000
© 2004 IXYS All rights reserve
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBH42N170.PDF ] | |
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