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IRL1004LPBFのメーカーはInternational Rectifierです、この部品の機能は「(IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET」です。 |
部品番号 | IRL1004LPBF |
| |
部品説明 | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRL1004LPBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)*
PD - 95575
IRL1004SPbF
IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.0065Ω
ID = 130A
S
D2Pak
IRL1004S
TO-262
IRL1004L
Max.
130
92
520
3.8
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/19/04
1 Page IRL1004S/LPbF
10000
1000
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
100
10
1
0.1
0.1
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10 2.7V
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
10
TJ = 25 °C
TJ = 175°C
1
0.1
2.0
V DS= 50V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
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2.5 ID = 130A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRL1004S/LPbF
VDS
RG
4.5 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
4.5 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
1800
1500
1200
TOP
BOTTOM
ID
32A
55A
78A
900
600
300
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRL1004LPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET | International Rectifier |