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IRGB4065PBF PDF Data sheet ( 特性 )

部品番号 IRGB4065PBF
部品説明 (IRGS4065PBF / IRGB4065PBF) PDP TRENCH IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB4065PBF Datasheet, IRGB4065PBF PDF,ピン配置, 機能
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PDP TRENCH IGBT
PD - 97059B
IRGB4065PbF
IRGS4065PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
C
Key Parameters
VCE min
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
300
1.75
205
150
CC
V
V
A
°C
G
E
n-channel
GCE
TO-220
IRGB4065DPbF
GCE
D2Pak
IRGS4065DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
dJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
dJunction-to-Ambient, TO-220
dJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
±30
70
40
205
178
71
1.4
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.70
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/05/06

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