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IRG4PC60U の電気的特性と機能

IRG4PC60UのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4PC60U
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4PC60U Datasheet, IRG4PC60U PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 94443
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC60U
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
VCES = 600V
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 40A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
75
40
300
300
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
----
0.24
----
6 (0.21)
Max.
0.24
----
40
----
Units
°C/W
g (oz)
1
04/26/02

1 Page





IRG4PC60U pdf, ピン配列
IRG4PC60U
80
Square wave:
Triangular wave:
60% of rated
voltage
60
Clamp voltage:
Ideal diodes
80% of rated
40
20
0
0.1
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
1
f , Frequency ( kHz )
10
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
1000
100
TJ = 150°C
10
1 TJ = 25°C
VGE = 15V
20µs PULSE WIDTH
0.1
0.0 1.0 2.0 3.0 4.0 5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
1000
100
TJ = 150°C
10 TJ = 25°C
VCC = 10V
5µs PULSE WIDTH
1
4 5 6 7 8 9 10 11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4PC60U 電子部品, 半導体
IRG4PC60U
8.0
RG = 5.0
7.0 TJ = 150°C
VGE = 15V
6.0 VCC= 480V
5.0
4.0
3.0
2.0
1.0
0.0
20
30 40 50 60
IC, Collector Current (A)
70
80
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGE = 20V
TJ = 125°
100
SAFE OPERATING AREA
10
1
0.1
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig. 12 - Turn-Off SOA
6 www.irf.com

6 Page



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共有リンク

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