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Número de pieza | IRG4PC60F-PPBF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 95567
IRG4PC60F-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
Solder plated version of industry standard
TO-247AC package.
Lead-Free
G
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified application conditions.
Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
Fast Speed IGBT
VCES = 600V
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 60A
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature
Max.
600
90
60
120
120
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
230 (Time above 183°C
should not exceed 100s)
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)
Weight
Typ.
0.24
6 (0.21)
Max.
0.24
40
20
www.irf.com
Units
V
A
V
mJ
W
°C
°C
Units
°C/W
g (oz)
1
07/15/04
1 page IRG4PC60F-PPbF
100000
10000
Cies
VGE = 0V, f = 1 MHZ
Cies = Cge + Cgc, Cce SHORTED
Cres = Cce
Coes = Cce+ Cgc
1000
Coes
100
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
V CC = 400V
I C = 40A
15
10
5
0
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
8.00
VCC= 480V
VGE = 15V
TJ = 25°C
7.00 I C= 60A
100
RG = 5.0Ω
VGE = 15V
VCC= 480V
IC = 120A
6.00
5.00
4.00
0
10 20 30 40
RG, Gate Resistance (Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
IC = 60A
IC = 30A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRG4PC60F-PPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4PC60F-PPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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