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IRFB3206PBF の電気的特性と機能

IRFB3206PBFのメーカーはInternational Rectifierです、この部品の機能は「(IRFxx3206PBF) HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB3206PBF
部品説明 (IRFxx3206PBF) HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB3206PBF Datasheet, IRFB3206PBF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification
in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
60V
2.4m:
3.0m:
cG ID (Silicon Limited) 210A
S ID (Package Limited) 120A
D
D
D
DS
G
TO-220AB
IRFB3206PbF
G
Gate
DS
G
D2Pak
IRFS3206PbF
D
Drain
DS
G
TO-262
IRFSL3206PbF
S
Source
Base Part Number
IRFB3206PbF
IRFSL3206PbF
IRFS3206PbF
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
50
800
800
Orderable Part Number
IRFB3206PbF
IRFSL3206PbF
IRFS3206PbF
IRFS3206TRLPbF
IRFS3206TRRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Symbol
Parameter
kJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
™210
™150
120
840
300
2.0
± 20
5.0
-55 to + 175
300
x x10lb in (1.1N m)
170
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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April 24, 2014

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IRFB3206PBF pdf, ピン配列
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
0.1
4.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 75A
VGS = 10V
2.0
10
1
0.1
2.0
TJ = 25°C
VDS = 25V
60μs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
12000
10000
8000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
6000
4000
2000
Coss
Crss
0
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 75A
16
12
VDS= 48V
VDS= 30V
VDS= 12V
8
4
0
0 40 80 120 160 200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
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April 24, 2014


3Pages


IRFB3206PBF 電子部品, 半導体
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
4.5
ID = 1.0A
4.0 ID = 1.0mA
3.5
ID = 250μA
ID = 150μA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
18
16
14
12
10
8
6
IF = 30A
4 VR = 51V
2 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
18
16
14
12
10
8
6
IF = 45A
4 VR = 51V
2 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
350
350
300
250
200
150
100 IF = 30A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
300
250
200
150
100 IF = 45A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com © 2014 International Rectifier
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April 24, 2014

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部品番号部品説明メーカ
IRFB3206PBF

(IRFxx3206PBF) HEXFET Power MOSFET

International Rectifier
International Rectifier


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