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PDF IRHM53Z60 Data sheet ( Hoja de datos )
| Número de pieza | IRHM53Z60 | |
| Descripción | (IRHM5xZ60) RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 93786B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57Z60 100K Rads (Si)
IRHM53Z60 300K Rads (Si)
IRHM54Z60 600K Rads (Si)
IRHM58Z60 1000K Rads (Si)
RDS(on)
0.0095Ω
0.0095Ω
0.0095Ω
0.010Ω
ID
35A*
35A*
35A*
35A*
IRHM57Z60
30V, N-CHANNEL
4# TECHNOLOGY
c
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Units
35*
35* A
140
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
35
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
1.1
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in./1.6 mm from case for 10s)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
08/06/02
1 page  
Pre-Irradiation
IRHM57Z60
15000
12000
9000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
3000
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A VDS = 24V
VDS = 15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
1 TJ = 25 ° C
0.1
0.0
VGS = 0 V
0.5 1.0 1.5
VSD ,Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
1ms
TC = 25°C
TJ = 150° C
Single Pulse
10
1
10
10ms
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM53Z60.PDF ] | |
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