DataSheet.jp

IRHM58160 の電気的特性と機能

IRHM58160のメーカーはInternational Rectifierです、この部品の機能は「(IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM58160
部品説明 (IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRHM58160ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRHM58160 Datasheet, IRHM58160 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 93784F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57160 100K Rads (Si)
IRHM53160 300K Rads (Si)
IRHM54160 600K Rads (Si)
IRHM58160 1000K Rads (Si)
RDS(on)
0.018
0.018
0.018
0.019
ID
35A*
35A*
35A*
35A*
IRHM57160
100V, N-CHANNEL
4# TECHNOLOGY
c
TO-254AA
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Neutron Tolerant
Single Event Effects (SEE) with useful performance n Identical Pre- and Post-Electrical Test Conditions
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings
of low RDS(on) and low gate charge reduces the power n Dynamic dv/dt Ratings
losses in switching applications such as DC to DC n Simple Drive Requirements
converters and motor control. These devices retain n Ease of Paralleling
all of the well established advantages of MOSFETs n Hermatically Sealed
such as voltage control, fast switching, ease of paral- n Electically Isolated
leling and temperature stability of electrical param- n Ceramic Eyelets
eters.
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
35* A
140
250 W
2.0 W/°C
±20 V
500 mJ
35 A
25 mJ
3.4
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
1
08/07/02

1 Page





IRHM58160 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHM57160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V
VGS(th) Gate Threshold Voltage
2.0 4.0
1.5 4.0
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
— 10 — 25 µA
— 0.013
— 0.014
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source
— 0.018 — 0.019
On-State Resistance (TO-254)
VSD Diode Forward Voltage
— 1.2 — 1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID =35A
VGS = 12V, ID =35A
VGS = 0V, IS = 35A
1. Part numbers IRHM57160, IRHM53160 and IRHM54160
2. Part number IRHM58160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 36.7
I 59.8
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 100
100
32.5 100
100
28.4 100
100
VDS (V)
@VGS=-10V
100
100
80
@VGS=-15V
100
35
25
@VGS=-20V
100
25
120
100
80
60
40
20
0
0
Br
I
Au
-5 -10 -15 -20
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHM58160 電子部品, 半導体
IRHM57160
Pre-Irradiation
100
LIMITED BY PACKAGE
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRHM58160 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRHM58160

(IRHM5x160) RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap