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IRHM53064 の電気的特性と機能

IRHM53064のメーカーはInternational Rectifierです、この部品の機能は「(IRHM5x064) RADIATION HARDENED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM53064
部品説明 (IRHM5x064) RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHM53064 Datasheet, IRHM53064 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 93792D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM57064 100K Rads (Si)
IRHM53064 300K Rads (Si)
IRHM54064 600K Rads (Si)
IRHM58064 1000K Rads (Si)
RDS(on)
0.012
0.012
0.012
0.013
ID
35A*
35A*
35A*
35A*
IRHM57064
60V, N-CHANNEL
5 TECHNOLOGY
™
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
35*
35* A
140
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
1090
35
20.8
4.8
-55 to 150
300 (0.063 in. (1.6 mm from case for10s )
9.3 (Typical )
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
07/19/04

1 Page





IRHM53064 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHM57064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
60 —
2.0 4.0
60 —
1.5 4.0
V
— 100
— -100
— 100 nA
— -100
— 10 — 25 µA
— 0.0061 — 0.0071
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 48V, VGS =0V
VGS = 12V, ID = 35A
RDS(on)
VSD
Static Drain-to-Source Ã
On-State Resistance (TO-254)
Diode Forward Voltage Ã
— 0.012 — 0.013
— 1.2 — 1.2 V
VGS = 12V, ID = 35A
VGS = 0V, IS = 35A
1. Part numbers IRHM57064, IRHM53064 and IRHM54064
2. Part number IRHM58064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br 37.3
285 36.8 60
60
60
60
40
Xe 63
300 29 46
46
35
25
15
Au 86.6
2068
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
Br
I
Au
-5 -10 -15 -20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHM53064 電子部品, 半導体
IRHM57064
Pre-Irradiation
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHM53064

(IRHM5x064) RADIATION HARDENED POWER MOSFET

International Rectifier
International Rectifier


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