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IRFB4020PBF の電気的特性と機能

IRFB4020PBFのメーカーはInternational Rectifierです、この部品の機能は「DIGITAL AUDIO MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4020PBF
部品説明 DIGITAL AUDIO MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB4020PBF Datasheet, IRFB4020PBF PDF,ピン配置, 機能
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DIGITAL AUDIO MOSFET
PD - 97195
IRFB4020PbF
Features
Key parameters optimized for Class-D audio
amplifier applications
Low RDSON for improved efficiency
Low QG and QSW for better THD and improved
efficiency
Low QRR for better THD and lower EMI
175°C operating junction temperature for
ruggedness
Can deliver up to 300W per channel into 8load in
half-bridge configuration amplifier
Key Parameters
VDS
RDS(ON) typ. @ 10V
200
80
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
18
6.7
3.2
175
D
G
V
m:
nC
nC
°C
S TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes  through … are on page 2
www.irf.com
Max.
200
±20
18
13
52
100
52
0.70
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.43
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
1
03/03/06

1 Page





IRFB4020PBF pdf, ピン配列
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
1
60µs PULSE WIDTH
Tj = 25°C
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VDS = 25V
60µs PULSE WIDTH
10 TJ = 175°C
1 TJ = 25°C
0.1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
IRFB4020PbF
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
5.0V
1
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.5
ID = 11A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
12.0
10.0
8.0
ID= 11A
VDS= 160V
VDS= 100V
VDS= 40V
6.0
4.0
2.0
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
5 10 15 20
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRFB4020PBF 電子部品, 半導体
IRFB4020PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
L
VCC
DUT
0
1K
Fig 18a. Gate Charge Test Circuit
6
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18b Gate Charge Waveform
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部品番号部品説明メーカ
IRFB4020PBF

DIGITAL AUDIO MOSFET

International Rectifier
International Rectifier


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